Simulation of single-electron devices

by Andreas Scholze

Publisher: Hartung-Gorre in Konstanz

Written in English
Published: Pages: 149 Downloads: 87
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Subjects:

  • Electronic apparatus and appliances -- Computer simulation.,
  • Microelectronics -- Mathematical models.,
  • Quantum dots -- Mathematical models.,
  • Transistors -- Mathematical models.

Edition Notes

StatementAndreas Scholze.
GenreMathematical models.
SeriesSeries in microelectronics -- v. 91
Classifications
LC ClassificationsTK7871.9 .S35 2000
The Physical Object
Paginationxii, 149 p. :
Number of Pages149
ID Numbers
Open LibraryOL19264788M
ISBN 103896495410

CiteSeerX - Document Details (Isaac Councill, Lee Giles, Pradeep Teregowda): This work presents a study of molecular single-electron devices that may be used as the basic building blocks in high-density re-sistive memories and hybrid CMOS/nanoelectronic integrated cir-cuits. It was focused on the design and simulation of a molecu-lar two-terminal nonvolatile resistive switch based on a system ?doi= This book addresses three areas: the theory which goes beyond the orthodox theory, the computational methods necessary to analyze sing- electron circuits, and applications and manufacturing methods, the practical side of single-electronics. The theory was kept short and concise, suitable for people seeking a compact introduction or :// The "molecular dynamics" method combined with Ensemble Monte Carlo, which has previously been used to investigate the effects of electron-electron Coulomb forces in a homogenous state, is applied to a simulation of the effect of mutual Coulomb scattering of the electrons in two parallel semiconductor layers separated by a thin dielectric :// T1 - Single-electron devices for ubiquitous and secure computing applications. AU - Uchida, Ken. PY - /11/ Y1 - /11/ N2 - Single-electron transistors (SETs) show promise as future functional elements in LSIs, because of their low-power consumption and small ://

  "Single electron devices are promising candidates for next-generation circuits. By clarifying the relationship between models of different levels, this book offers useful knowledge on modeling which makes single electron devices treated the same as conventional transistors during circuit :// Single-electron devices have drawn much attention in the last two decades. They have been widely used for device research and also show promise as a potential alternative to complementary metal-oxide-semiconductor circuits due to their ultra low power :// The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD ) continues a long series of conferences and is held in September at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD)  › Engineering › Electronics & Electrical Engineering. World's Best PowerPoint Templates - CrystalGraphics offers more PowerPoint templates than anyone else in the world, with over 4 million to choose from. Winner of the Standing Ovation Award for “Best PowerPoint Templates” from Presentations Magazine. They'll give your presentations a professional, memorable appearance - the kind of sophisticated look that today's audiences ://

  This striking difference is further illustrated with Figure and can be explained based on the energy and momentum conservation required in the electron-photon interaction. The direct bandgap semiconductor, which has a vertically aligned conduction and valence band, is shown in Figure (a). Absorption of a photon is obtained if an empty state in the conduction band is available for ~bart/book/book/chapter4/   Single-electron devices and circuits - a large online dissertation. Principles of semiconductor devices - a large set of lectures; physics of p-n junction; different types of transistors, etc. Sub-one-tenth micron transistors - from IBM research group. Integrated semiconductors technology analysis - a large online dissertation by Ch.   The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions more» in the charge stability diagram where three charge-addition lines of   SGFramework Book and CD-ROM: Semiconductor Devices, a Simulation Approach. A new, practical, breakthrough in modeling semiconductor devices. Quickly solve for critical parameters such as carrier concentration, potential, and current throughout the device. Automatically generate color 3D graphs of ~hitchon.

Simulation of single-electron devices by Andreas Scholze Download PDF EPUB FB2

Simulation of single-electron devices A dissertation submitted to the SWISS FEDERAL INSTITUTE OF TECHNOLOGY ZURICH for the degree of Ph. presented by ANDREAS SCHOLZE Dipl. Phys., University of Jena born J citizen of Germany accepted on the recommendation of Prof.

Wolfgang Fichtner, examiner Prof. Klaus Ensslin, co-examiner ~schenk/theses/ In this paper we present a simulation approach for electron transport in single-electron devices based on a weak-coupling formulation for the linear-response transconductance of a quantum dot/reservoir system.

A simulation tool devised for the simulation of single-electron transistors has been ://   Design and Simulation of Single-Electron Molecular Devices by Nikita Simonian Doctor of Philosophy in Physics Stony Brook University This work presents a study of molecular single-electron devices that may be used as the basic building blocks in high-density re-sistive memories and hybrid CMOS/nanoelectronic integrated Cite this paper as: Nakazato K.

() Single Electron Memory Device Simulations. In: De Meyer K., Biesemans S. (eds) Simulation of Semiconductor Processes and Devices : Introduction to Nanoelectronic Single-Electron Circuit Design (): Jaap Hoekstra: Books The article mainly focuses on the simulation of the single electron device and circuit.

The orthodox model of single electronic device is introduced and the simulation with Matlab and Pspice is illustrated in the article.

Moreover, the built of robust circuit using single electronic according to neural network is done and the simulation is also included in the ://   The method has been used to simulate a typical device consists of single-electron transistors, inverters and memory cells.

The initial simulation results show that the proposed method can provide accurate simulation results with high speed and it could be a potential candidate for simulation of integrated nanoscale :// The another big limitation with all the kn own ty pes of single electron logic devices is the requirement Ec~kB T, which in practic e means sub-nanometer island size for room temperature   Single Electron Transistor: Applications and Limitations 59 The another big problem with all the known types of single electron logic devices is the requirement Ec~kB T, which in practice means sub-nanometer island size for room temperature operation.

In pdf. The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their :// Flow of the Monte Carlo method used in SEMSIM Example Input File 1: Single-electron transistor #SET component definitions junc 1 1 4 1e-6 1e junc 2 2 4 1e-6 1e cap 3 4 3e charge 4 # In this paper we present NAND gates designed using single electron logic.

First the single-electron NAND behaviour is studied and then the energy performance of the circuit is examined. The whole design and simulation is made using a Monte-Carlo based tool.

The results proved that the circuits were behaving as NAND gates, while the free energy study of the system and the stability diagram   In particular, he is a co-author for the book: Guide to State-of-the-Art Electron Devices which was jointly published by Wiley and IEEE for celebrating the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices :// /transactions-on-electron-devices/editor-in-chief-and-editors.

simulation of single electron circuits figure 2. Single electron diode (a) and corresponding Coulomb blockade characteristic Co). For multiple element circuits the situation becomes soon very complex, because an electron transition influences many islands via capacitive W.

ROsner et al. / Microeleetronic Engineering 27 () 57 e2Rr xB1 SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Carlo method. It allows transient and stationary simulation of arbitrary circuits consisting of tunnel The 2D structure of single electron transistor with recessed channel is created using sentaurus tool.

SET device is simulated for room temperature (K). Sentaurus Device is used for simulating   3 Simulation of Single Electron Devices The computer is the primary research instrument of the sciences. Heinz Pagels in real life mistakes are likely to be irrevocable.

Computer simulation, however, makes it economically practical to make mistakes on purpose. If you are astute, therefore, you can learn much more than they ://   single-electron devices that could find use in large scale circuitry include single-electron flip-flops and electron traps for memory [5], [6], and single-electron transistors for logic [7]–[9].

To characterize single-electron device and circuit behaviour, models and ~papers/date08/PAPERS//DATE08/PDFFILES/ First the single-electron NAND behaviour is studied and then the energy performance of the circuit is examined. The whole design and simulation is made using a Monte-Carlo based tool.

The results proved that the circuits were behaving as NAND gates, while the free energy study of the system and the stability diagram verified the correct   Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices. IJCA Proceedings on International Symposium on Devices MEMS, Intelligent Systems & Communication (ISDMISC) (3),   Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices n Kushal Pokhrel S K Sarkar Amit Agarwal Sharmistha Chetia Dept of E&C Engg Dept of E&C Eng Dept of ETC Engg, Dept of E&C Engg.

Dept of E&C Engg SMIT, Majitar, SMIT This work presents a study of molecular single-electron devices that may be used as the basic building blocks in high-density resistive memories and hybrid CMOS/nanoelectronic integrated circuits. It was focused on the design and simulation of a molecular two-terminal nonvolatile resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a S/abstract.

Design of nm single-electron transistor (SET) by 2D TCAD simulation The power of SET device that obtained from simulation is times Watt for fixed current and Get this from a library. Single-electron devices and circuits in silicon. [Zahid Ali Khan Durrani] -- "This book reviews research on single-electron devices and circuits in silicon.

These devices provide a means to control electronic charge at the one-electron level and are promising systems for the Abstract: Based on both the I-V characteristics of single-electron transistors and the MOS digital integrated circuit design concept, a good combination of single-electron transistors with MOS transistors is advanced to create a novel inverter, which, compared with the pure SET circuit, is considerably augmented in its voltage gain and drive ://   He was the Editor of IEEE Transactions on Electron Devices, during He is the member of the National Innovation Council in Nanoelectronics.

He is the founder and promoter of a startup called “PathShodh Healthcare”, which builds point-of   SIMON is a sophisticated multipurpose simulator for single-electron devices and circuits.

It features a graphical circuit editor embedded in a graphical user interface as well as the simulation of co-tunnel events and a single step interactive analyses mode.

It supports energy dependent density of states and is able to calculate stability ://   Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices ?id= This volume contains the proceedings of the International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices  › Engineering › Electronics & Electrical Engineering.

Book Description. Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices.

Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit  › Home › eBooks.Adrian M.

Ionescu Adrian Mihai Ionescu is head of the Laboratory of Micro/Nanoelectronic Devices and an associate professor at the Swiss Federal Institute of Technology, Lausanne, Switzerland. He has served in the technical program committees of the IEEE International Electron Device Meeting, the IEEE International Symposium on Quality Electronic Design and the International Micro- and Nano   Archimedes is the GNU package for the design and simulation of submicron semiconductor devices.

It is a 2D Fast Monte Carlo simulator which can take into account all the relevant quantum effects, thank to the implementation of the Bohm effective potential ://